Sugiura, Takaya

写真a

Affiliation

Graduate School of Science and Technology (Yagami)

Position

Researcher (Non-tenured) / Project Researcher(Non-tenured)

External Links

Academic Degrees 【 Display / hide

  • Doctor(Engineering), Keio University, Coursework, 2021.03

    Designs of Next Generation c-Si Solar Cells by Numerical Simulation

 

Research Areas 【 Display / hide

  • Manufacturing Technology (Mechanical Engineering, Electrical and Electronic Engineering, Chemical Engineering) / Electron device and electronic equipment (c-Si Photovoltaics)

  • Manufacturing Technology (Mechanical Engineering, Electrical and Electronic Engineering, Chemical Engineering) / Electric and electronic materials (Semiconductor Piezoresistance)

  • Manufacturing Technology (Mechanical Engineering, Electrical and Electronic Engineering, Chemical Engineering) / Electric and electronic materials (Power electronics)

  • Manufacturing Technology (Mechanical Engineering, Electrical and Electronic Engineering, Chemical Engineering) / Electron device and electronic equipment (Photonics)

  • Manufacturing Technology (Mechanical Engineering, Electrical and Electronic Engineering, Chemical Engineering) / Electron device and electronic equipment (c-Si Photovoltaics)

Research Keywords 【 Display / hide

  • Micro Electro Mechanical Systems

  • Analog Circuits

  • Device Simulation

  • Power Electronics

  • Photonics

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Papers 【 Display / hide

  • Transparent Conductive Oxide Materials for Bifacial Heterojunction Back Contact Solar Cells

    Takaya Sugiura, Nobuhiko Nakano

    IEEE Transactions on Electron Devices  2022.07

    Lead author, Accepted

  • Impact Ionization and Critical Electric Field in <010> Oriented β-Ga2O3 Schottky Barrier Diode

    Takaya Sugiura, Nobuhiko Nakano

    IEEE Transactions on Electron Devices (Institute of Electrical and Electronics Engineers (IEEE))  69 ( 6 ) 1 - 5 2022.06

    Lead author, Accepted,  ISSN  0018-9383

  • Advanced Industrial Tunnel Oxide Passivated Contact Solar Cell by the Rear-side Local Carrier-Selective Contact

    Takaya Sugiura, Satoru Matsumoto, Nobuhiko Nakano

    IEEE Transactions on Electron Devices (Institute of Electrical and Electronics Engineers (IEEE))  69 ( 5 ) 2481 - 2487 2022.05

    Research paper (scientific journal), Joint Work, Lead author, Accepted,  ISSN  0018-9383

     View Summary

    In this study, we propose an advanced tunnel oxide passivated contact (TOPCon) solar cell structure for bifacial usage. The proposed structure, named advanced industrial TOPCon (Ai-TOPCon), adopts rear-side local carrier-selective contacts to avoid rear-side light-absorption loss. Ai-TOPCon features larger rear-side light currents and improves the power density by approximately 0.28 mW/cm&#x00B2; for bifacial usage in a 20&#x0025; albedo scenario. Several types of Ai-TOPCon and industrial TOPCon (i-TOPCon) are evaluated, and the optimization of the structure resulted in a power density of 28.73 mW/cm&#x00B2;. Loss analysis revealed that the reduced Auger recombination volume was the main factor contributing to the improvement of cell performance, and the light-absorption problem was solved by reducing the rear-side heavy-doped region.

  • High-Temperature Piezoresistance of Silicon Carbide and Gallium Nitride Materials

    Takaya Sugiura, Naoki Takahashi, Ryohei Sakota, Kazunori Matsuda, and Nobuhiko Nakano

    IEEE Journal of the Electron Devices Society (IEEE)  10   203 - 211 2022.02

    Research paper (scientific journal), Joint Work, Lead author, Accepted,  ISSN  2168-6734

     View Summary

    We examine the temperature dependence of the piezoresistive coefficients of silicon carbide (SiC) and gallium nitride (GaN) crystals, which are prospective materials for high-temperature applications owing to their wide-bandgap properties. The temperature-dependent piezoresistive coefficients of these materials were obtained by modeling experimental resistance changes using thermomechanical numerical simulations. This work reports the piezoresistive coefficients of 4H-SiC and GaN at the high-temperature environments, which are still not well researched. The results revealed that the temperature dependences of piezoresistive coefficients were strongly related to the ionization energy, and a high ionization energy stabilized the values of the piezoresistive coefficients at high temperatures. Our proposed temperature modeling method helps in predicting the temperature dependence of the piezoresistive coefficient using the value at the room temperature and the ionization energy of the material, which is useful for evaluating the piezoresistive effect at different temperatures during device simulations.

  • Bifacial Heterojunction Back Contact Solar Cell: 29-mW/cm² Output Power Density in Standard Albedo Condition

    Takaya Sugiura, Satoru Matsumoto, Nobuhiko Nakano

    IEEE Transactions on Electron Devices (Institute of Electrical and Electronics Engineers (IEEE))  68 ( 11 ) 5645 - 5651 2021.11

    Accepted,  ISSN  00189383

     View Summary

    A new crystalline-Si (c-Si) solar cell design based on bifacial heterojunction back contact (HBC) with a transparent conductive oxide (TCO) is proposed by the numerical simulation method. Three bifacial HBC schemes are evaluated and compared: full-area contact with an increase in the pitch distance, point contact, and point contact with indium tin oxide (ITO). The results reveal that point contact with ITO is the most optimal among the three aforenoted schemes. The bottleneck of bifacial HBC is caused by the extremely low carrier mobility in an amorphous Si (a-Si) region, and this can be resolved by applying ITO to form a full-contact area that covers all surfaces of the a-Si region. A maximum power density of 29 mW/cm&#x00B2; is obtained from bifacial HBC, which is an extremely high output from a single-junction c-Si solar cell. The improvement in the maximum power density over the monofacial condition is 8&#x0025; at 20&#x0025; albedo.

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Presentations 【 Display / hide

  • Determination of the Piezoresistive Coefficient of β-Ga2O3 in <010> Direction Using Numerical Analysis

    Naoki Takahashi, Takaya Sugiura, Ryohei Sakota, Nobuhiko Nakano

    33rd International Microprocesses and Nanotechnology Conference (MNC 2020), 

    2020.11

    Oral presentation (general)

  • Evaluation of p-type 4H-SiC piezoresistance coefficients in (0001) plane using numerical simulation

    Takaya Sugiura, Naoki Takahashi, Nobuhiko Nakano

    International Conference on Silicon Carbide and Related Materials 2019, 

    2019.09
    -
    2019.10

    Poster presentation

  • Evaluations of TOPCon Solar Cell Rear Structure on Numerical Simulations

    Takaya Sugiura, Satoru Matsumoto, Nobuhiko Nakano

    2019 International Conference on Solid State Device and Materials, 

    2019.09

    Poster presentation

  • Evaluation of piezoresistive coefficients of 4H-SiC at room temperature by device simulation

    Naoki Takahashi, Takaya Sugiura, Nobuhiko Nakano

    第2回 サステナブルコンピューティング特別研究会, 

    2019.08

    Oral presentation (general)

  • PERC型太陽電池の性能向上を 目指したTCADシミュレーション

    杉浦隆弥, 松本智, 中野誠彦

    第65回応用物理学会春季学術講演会, 

    2018.03

    Oral presentation (general)

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Intellectual Property Rights, etc. 【 Display / hide

  • 特願2022-13609号

    Date applied: 特願2022-13609号  2022.01 

    Patent

  • 特願2021-139928号

    Date applied: 特願2021-139928号  2021.08 

    Patent

  • 特願2021-139929号

    Date applied: 特願2021-139929号  2021.08 

    Patent

  • 特願2021-44523号

    Date applied: 特願2021-44523号  2021.03 

    Patent

Awards 【 Display / hide

  • 慶應義塾大学理工学研究科総合デザイン工学専攻 優秀研究活動賞(博士)

    2021.03, Keio University

    Type of Award: Keio commendation etc.

 

Academic Activities 【 Display / hide

  • Peer review - IEEE Transactions on Power Electronics

    2021.02
    -
    2021.04

Memberships in Academic Societies 【 Display / hide

  • IEEE, 

    2022.02
    -
    Present
  • The Japan Society of Applied Physics, 

    2018.01
    -
    2021.12